Temperature dependent GaAs MMIC radiation effects

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications

The coherent generation and detection of terahertz (THz) radiation using ultrashort laser pulses and photoconductive antennae have been intensively studied during the last decade. The best results were achieved when low-temperature MBE grown GaAs (LTG GaAs) or ion-implanted GaAs layers were used as a basis for THz emitters and detectors. The ultimate performance of these devices depends on carr...

متن کامل

High-Reliability Deep Submicron GaAs Pseudomorphic HEMT MMIC Amplifiers

High-reliability performance of a Q-band MMIC amplifier fabricated using TRW’s 0.1 μm production AlGaAs/GaAs HEMT process technology is reported. Operating at an accelerated life test conditions of Vds=4.2V and Ids=150mA/mm, two-stage balanced amplifiers were lifetested at threetemperatures (Ta=255 C, Ta=270 C, and Ta=285 C) in air ambient. The activation energy (Ea) is as high as 1.7 eV, achie...

متن کامل

A Process Control Methodology Applied to Manufacturing GaAs MMIC ’ s

A methodology for guiding process-driven manufacturing organizations in instituting process control on a facility-wide basis is proposed. The methodology begins with a definition of the customer’s expectations and of the manufacturing process used to meet these expectations. The output, of a given process or subprocess must reach four progressive levels of control. When the output can be reliab...

متن کامل

A Miniaturized GaAs MMIC Bandpass Filter for 5GHz Band

Novel miniaturized GaAs based bandpass filters for 5GHz band WLAN using diagonally end-shorted coupled lines and lumped capacitors are proposed. The new filter has a compact size, as small as a few degrees, and shows wider stopband characteristic over 35dB up to 60 GHz. A two-stage band pass filter with planar structure was designed and fabricated at a center frequency of 5.5 GHz, with chip sur...

متن کامل

Temperature-dependent Raman investigation of rolled up InGaAs/GaAs microtubes

Large arrays of multifunctional rolled-up semiconductors can be mass-produced with precisely controlled size and composition, making them of great technological interest for micro- and nano-scale device fabrication. The microtube behavior at different temperatures is a key factor towards further engineering their functionality, as well as for characterizing strain, defects, and temperature-depe...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Transactions on Nuclear Science

سال: 1993

ISSN: 0018-9499,1558-1578

DOI: 10.1109/23.273485